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06.11.2018
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06.11.2018
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06.11.2018
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01707-01
Crystal growth, Magnetic field, Conductive material, Electromagnetic stirring, High homogeneity
French patent of invention FR851259 filed on February 27th, 2008 and entitled « Procédé de cristallogenese d’un matériau électriquement conducteur »
Thierry DUFFAR
Gilbert VIAN
Vladimir GOLYSHEV
Sveltana BYKOZA
SIMAP (Science et Ingénierie des MAtériaux et Procédés ), UMR 5266, Grenoble, France, http://simap.grenoble-inp.fr/accueil/
Segregation of chemical species during solidification of alloys is a well known problem which leads to defects in the material and is largely prejudicial to electronic properties of semi conductors or optical properties of lasers and scintillators. Moreover composition variations lead to microstructure defects detrimental to the growth of single crystals and in some cases leading to breakdown of the samples. There is a need for a simple process aiming at producing highly alloyed materials without cracks in the crystal and showing high radial and longitudinal homogeneity with an acceptable cristallisation speed (mm/h).
The well known « Bridgman » method does not fulfill these requirements (cracks and lack of homogeneity)
In the process as proposed here a conductive material is melt in a crucible.The temperature of the molten material is slowly decreased so that a Liquid-Solid (LS) interface is created and the flatness of the SL interface is controlled through the control of the temperature of a piston maintained above the interface. The melt material is stirred by alternative electromagnetic forces during all the process.
Faster growth rate/uniform alloy composition (radial and longitudinal) and crystal homogeneity / production of conductive materials / highly alloyed materials / The process may be applied to any conductive material such as
* semiconductors (germanium and silicium binary alloys/ III-V ternary alloys based on antimony – GaSb, AlSb, InSb-, arsenides -GaAs InAs – or phospides – GaP, InP-, ternary II-IV alloys based on tellurides -CdTe, ZnTe, HgTe- or selenides – CdSe , ZnSe-, silicium).
* metallic alloys
* glasses
* oxides or halide crystals if they are electrically condicting in liquid state
* micro-electronics (Ge and Si alloys)
* high-speed electronics and optoelectronics (GaSb, AlSb , InSb, GaAs, InAs, GaP, In…)
*sensors /detectors for all wavelengths: gamma, X, UV, visible or IR (CdTe, ZnTe, HgTe, CdSe, ZnSe)
* Photovoltaic application by melting and refining of Silicon from lower purity and hence lower cost
* technical glasses for optronics.
For further information, please contact us (Ref 01707-01)
04.10.2013
Capteur et Electronique 86668-01
02.10.2013
Capteur et Electronique 03363-01
02.10.2013
Capteur et Electronique 01499-01
06.11.2018
Matériaux – Revêtements 07293-01
06.11.2018
Matériaux – Revêtements 10581-01
06.11.2018
Chimie 08758-01
06.11.2018
11127-01
06.11.2018
Environnement et Energie 11107-01
19.10.2018
Diagnostic médical 08504-01