TECHNICAL DESCRIPTION

The invention concerns the field of Micro-Opto-Electrical Microsystems (MOEMS).

The respective thickness and composition of three semiconductor layers and spacers are selected so that the structure has at least one optical transfer function adapted to light to be treated and adjustable in accordance with the selected potentials applied to the semiconductor layers. The semiconductor layers, having N-type or P-type doping which may differ or not from one layer to the next, are separated by spacers with non-intentional (I-type) or intentional (N-type or P-type) doping to define a PINIP or NIPIN structure with air cavities and are adapted to be set at selected respective electric potentials. The respective thickness and composition of the layers and the spacers are selected so that the structure has at least one optical transfer function adapted to light to be treated and adjustable in accordance with the selected potentials applied to the semiconductor layers.

BENEFITS

The invention provides a general optical stack concept to produce optical filters or switches which can be designed for a large number of functions.

INDUSTRIAL APPLICATIONS

Devices for optical fibre communication, Microspectrometers.

ADDITIONAL INFORMATION

Related publication

Michel Garrigues, J- Leclercq, Romain Gil-Sobraqués, Olivier Parillaud, Michel Crochon, Jean-Michel Roger, Octave Amore, Bruno Vilotitch, « An Indium phosphide-based  Near Infrared MOEMS Microspectrometer for agri-food and environmental monitoring », Photonic West 2007 conference.