CONTEXT

The field of spintronics aims to augment existing electrically based functionalities in electronic circuits by utilizing the electron spin – a quantum mechanical parameter of the electron – to encode or process information in future memory or computing applications in the IT sector. This requires a source of electrical current consisting of electrons that exhibit a high degree of spin polarization. As goalposts for technological integration, This ideal spin polarized current source should function at room temperature and up to at least 150C, be cheap and straightforward to synthesize, compatible with Nanoscales applications and provide a compelling integration path with existing semiconductor technologies. A number of candidates have been tested over the past two decades, with so far little success.

TECHNICAL DESCRIPTION

The present patent, based on solid experimental/theoretical results, describes a general class of current sources that can achieve the aforementioned characteristics of an ideal spin polarized current source.

ADVANTAGES

Relative to other solutions, the one described in the patent exhibits all the characteristics of a highly spin-polarized current source.

INDUSTRIAL APPLICATIONS

Solid state memory elements, on-chip source of spin-polarized current for information encoding/processing within an all-spintronic circuit design.

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