Vertical metal-semiconductor microresonator photodetecting device
Référence
84444-01
Mots-clés
Statut des brevets
French patent application FR0000468 filed on January 14, 2000 entitled « Dispositif de photodétection à microrésonateur métal-semiconducteur vertical et procédé de fabrication de ce dispositif »
Inventeurs
Fabrice PARDO
Stéphane COLLIN
Rolland TEISSIER
Jean-Luc PELOUARD
Statut commercial
Exclusive or non-exclusive licenses and collaborative research
Laboratoire
Laboratoire de photonique et de nanostructures, a CNRS laboratory (UPR 20), in Marcoussis, France.
Description
TECHNICAL DESCRIPTION
The invention concerns a device for photodetection with a vertical metal semiconductor microresonator and procedure for the manufacture of this device.
According to the invention, in order to detect an incident light, at least one element is formed over an insulating layer that does not absorb this light, including a semiconductor material and at least two electrodes holding the element, with the element and electrode unit being suitable for absorbing this light and designed to increase the light intensity with respect to the incident light, in particular by making a surface plasmon mode resonate between the unit interfaces with the layer and the propagation medium for the incident light, with the resonance of this mode taking place in the interface between the element and at least one of the electrodes, with this mode being excited by the component of the magnetic field of the light, parallel to the electrodes. Application for optical telecommunications.
BENEFITS
The photo-detection device has a high selectivity of wavelength together with extreme rapidity and a high sensitivity.
INDUSTRIAL APPLICATIONS
Optical communications.